发明名称 ELECTRON BEAM EXPOSURE
摘要 PURPOSE:To reduce deterioration of pattern precision according to temperature variation at electron beam exposure by a method wherein the transferring pitch of a stage securing a sample thereon is corected according to the asmple temperatue measured value obtained from a temperature sensor. CONSTITUTION:The temperature measured by the temperature sensor is inputted to an electric computer 4 controlling the beam system, etc., and the transferring quantities of driving motors 8 are controlled according to the system as shown in the figure. For example, neasured temperature data sent from the temperature sensor 6 is inputted to a stage control system 14, it is compared in a memory 15 storing previously actually surveyed correction data, the transferring quantities thereof are corrected, and the stage is transferred by the driving motors 12, 13. Accordingly, the pattern error according to temperature variation can be reduced enabling to nearly correspond to length of the sample, and can be made to be the extent of 0.25mum in the total pitch.
申请公布号 JPS5955017(A) 申请公布日期 1984.03.29
申请号 JP19820165737 申请日期 1982.09.22
申请人 FUJITSU KK 发明人 KOBAYASHI KENICHI
分类号 H01L21/027;H01J37/304;H01J37/305;H01J37/34 主分类号 H01L21/027
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