| 摘要 |
PURPOSE:To increase the integration of a semiconductor device and to shorten the steps by sequentially forming a nitrided silicon film and a polycrystalline silicon film having a hole on a semiconductor substrate and implanting impurity ions on the entire surface. CONSTITUTION:After the patter of a nitrided silicon film 12 of the second layer is formed, a polycrystalline silicon film 9 of the second layer is thermally oxidized to simultaneously form a polycrystalline silicon wiring pattern and an inslating film 13. Ions are implanted through the film 9, thereby simultaneously forming a polycrystalline wiring layer 14 having high impurity density and shallow source and drain diffused layers having low impurity density. Further, a nitrided silicon film 7 of the first layer is formed, thereby preventing a gate electrode 5 from being oxidized by the surface of the diffused layer becoming the source and drain the film 9 of the first layer at the thermally oxidizing time of the film 9. |
