| 摘要 |
<p>PURPOSE:To perform the etching of an interlayer insulating film and a protective film with good controllability for forming a fuse hole window by growing the second-layer polycrystalline silicon layer through a protective insulating film on a polycrystalline silicon fuse formed on an insulating film and patterning it corresponding to the hole window. CONSTITUTION:The first layer polycrystalline silicon layer is grown on an insulating film 16 on a silicon substrate 10, patterned to form a polycrystalline silicon fuse 11, a protective insulating film 19 is formed thereon, the second layer polycrystalline silicon layer 12 is grown, patterned corresponding to the fuse hole window, interlayer insulating and/or protective insulating film 17 is grown on the second layer polycrystalline silicon layer, and etched to form the fuse hole window 13. Then, the second layer protective polycrystalline silicon layer 12 is all removed in the window, and the fuse protective oxidized film 19 is eventually removed. A polysilicon fuse ROM is stocked in the state that the fuse hole window is completely formed, the prescribed polysilicon fuse is burnt out as required in the respective cases to form an ROM.</p> |
