| 摘要 |
PURPOSE:To facilitate isolation between each of elements, and to contrive to prevent a semiconductor device from generation of a bird beak, disconnection of an electrode, etc., by a method wherein element regions are isolated in self- alignment manner according to an insulating film by removing an oxide film and a non-single crystal layer formed on a substrate, and the surfaces of the regions are made to nearly the same level with the surface of the insulating film. CONSTITUTION:After phosphorus ions are implanted in a single crystal silicon layer 61, a heat treatment is performed to form the N-well region 10. Thin oxide films 111, 112 to act as the gate oxide films are formed on the surfaces of the N-well region 10 and a single crystal layer 62 in succession. Then, after gate electrodes 12, 12 are formed respectively on the thin oxide films 111, 112, the P type source.drain regions 131, 141 are formed on the surface of the N-well region 10, the N type source.drain regions 132, 142 are formed in succession on the surface of the P type single crystal layer 62, and after the thin oxide films 111, 112 are removed selectively, the common lead out electrode 15 of the P type and the N type source regions 131, 132, etc., are formed to form the desired CMOS inverter consisting of the PMOS and the NMOS transistors. |
