| 摘要 |
PURPOSE:To process a polysilicon film into single crystal, and to obtain a single crystal zone having large area, by pilling simultaneously a polysilicon film on an insulating film and a single crystal film on a substrate of single crystal a vopor growth method, depositing a single crystal silicon film on them. CONSTITUTION:The silicon oxide film (insulating film ) 2 having an pening is formed on the substrate 1 of silicon single crystal, the polysilicon film 3 is piled on the insulating film 2 and the single crystal silicon film 3 is deposited on the substrate exposed to the opening simultaneously by a vapor growth method, the single crystal silicon film 4 is piled at least on the single crystal film 3 and the insulating film 2 around it by the vapor grwoth method, and the polysilicon film 3 under the single silicon film 4 in the pile is processed into single crystal to give the single crystal silicon film 5. By setting proper conditions of pressure, temperature, and ratio fo Si/Cl, enlarged speed of single crystal zone in the width direction much higher than piling speed of the single crystal in the thickness direction can be obtained, and a single crystal zone having large area is prepared. |
