发明名称 APPLYING METHOD OF PHOTO-RESIST
摘要 PURPOSE:To simplify an applying process of a photo-resist requiring process control to which strict attention must be paid, and to increase adhesion force by continuously treating the surface of a base body by plasma without returning a treating chamber to atmospheric pressure. CONSTITUTION:The base body holder 2 to which the base body 1 to which a thin-film is formed is fitted is set up to a high-frequency electrode 4 in a treating chamber 3 and the inside of the treating chamber 3 is evacuated through a normal method, a shutter 10 is opened and evaporation is started, the shutter 10 is closed when film thickness reaches predetermined value while monitoring an evaporated film thickness meter 11, conduction to a boat 8 is stopped, and the operation of evaporation is completed. The base body after evaporation is left as it is for a time such as sixty min for annealing in vacuum, and Ar or O2 gas is introduced from a gas feeder 12. The high-frequency electrode 4 is supplied with high-frequency power through an impedance matching appliance 15 from a high-frequency power supply 14 while stably keeping the pressure of the treating chamber 3 by adjusting the opening of a main valve 13 to generate Ar or O2 plasma.
申请公布号 JPS5941837(A) 申请公布日期 1984.03.08
申请号 JP19820153260 申请日期 1982.08.31
申请人 MITSUBISHI DENKI KK 发明人 TSUBOI SHIYUNGO;SUGAWARA HIROSHI
分类号 B05D1/40;G03F7/16;H01L21/027 主分类号 B05D1/40
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