| 摘要 |
PURPOSE:To obtain a metal pattern free from white turbidity or the like adhered to a wafer, by sputtering the wafer in such a state that the surface of said wafer is masked by a desired pattern formed of a heat insulating material to prevent the rising in the temp. of the wafer. CONSTITUTION:A wafer 6 is masked in such a state that a desired pattern 8 formed of a heat insulating material is applied to the surface thereof and used in an anode side while an Al target 5 is used in a cathode side to perform sputtering. In this case, Al paticles projected toward the wafer 6 from the Al target 5 reach the surface of the wafer 6 only from the pattern part 8 and the parts other than said pattern part 8 are blocked by the heat insulating material 7. By this method, the amount of Al particles impinged to the wafer 6 is limited to prevent the rising in the temp. of the wafer 6 and the white turbidity of adhered Al is prevented and, at the same time, a pattern can be formed. |
