发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a stable coupling layer through a simple method by oppositely arranging a metallic layer and a semiconductor substrate while forming a clearance of predetermined thickness, heating and melting a solder material under a solid state disposed to the outside of the layer and the substrate and flowing the solder material in the clearance. CONSTITUTION:A radiating metallic plate 13 and the semiconductor substrate 11 are set up at positions where they must be combined through braze while being separated only by a distance H. The solder material 15 is placed on a metallic film 14 separate from a region A of which the outer circumferential line of the metallic film 12 of the substrate 11 is projected on the metallic film 14 formed on the metallic plate 13. The solder material 15 is melted by heating the whole at a melting temperature or more of solder in a reducing-gas atmosphere such as hydrogen. Undesirable dross 18 as a solder component combining semiconductor constitutional parts is separated from melted solder 17 at that time. The melted solder 17 flows in the clearance, and the metallic plate 13 and the substrate 11 are brazed.
申请公布号 JPS5939034(A) 申请公布日期 1984.03.03
申请号 JP19820148954 申请日期 1982.08.27
申请人 SHINDENGEN KOGYO KK 发明人 WAKATABE MASARU;ITOU KAZUHIKO
分类号 H01L21/52;H01L21/58;H05K3/00;H05K3/34;(IPC1-7):01L21/58 主分类号 H01L21/52
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