| 摘要 |
PURPOSE:To prevent the increase of the resistance of a buried layer by forming a thin insulating film in a region, in which the buried layer is formed, and etching a substrate corresponding to a marker region while using the insulating film as a mask. CONSTITUTION:A thermal oxide film 12 is formed on the Si substrate 11, and windows are bored to the marker region A and a semiconductor element region B through a photoetching method. The thin oxide films 13A, 13B are formed on the substrate 11, and the oxide film 13A of the region A is removed through etching. The marker region A is etched by using a hydrazine solution to form an indentation. The oxide film 13B of the region B is removed, Sb is diffused into the regions A, B while using Sb2O3 as a source, and Sb layers 14, 15 as the buried layers are formed. When an epitaxial layer is formed on the substrate 11, the buried layer of low resistance can be formed because there is no indentation in the region B. |
