| 摘要 |
PURPOSE:To form a spherical convex lens part on the surface of the semiconductor located directly below a mask forming region by a method wherein a circular mask is formed by coating on the surface of the light-emitting part of a light-emitting element using a material which will be gradually soaked into an etchant, and then a chemical etching is performed. CONSTITUTION:A P type GaAlAs layer 2 and a P type GaAlAs layer 3 is grown on an N type GaAlAs substrate 1, and an SiO2 film 4 is formed on the surface of said layer 3. Then a circular mask 5, consisting of a photoresist, is formed on the part which will be turned to the light injecting part on the surface of the substrate 1, and an etching is performed by soaking the above into the etching solution consisting of NaOH-H2O2. The mask 5 is etched slowly simultaneously with the etching performed on the surface of the substrate 1, and a spherical convex lens part 6 is completed on the part located below the region where the mask 5 was formed. Subsequently, a hole is provided at the prescribed part on the film 4, a P type electrode 7 is formed on the surface thereof and, at the same time, an N type electrode is formed on the surface of the substrate 1, excluding the lens part 6. |
