| 摘要 |
PURPOSE:To contrive high integration and high efficiency of the titled semiconductor device by a method wherein the channel direction of the upper MOS transistor is positioned in the direction where it is intersecting with the channel direction of the lower MOS transistor. CONSTITUTION:An N-channel MOS transistor (NMOSTr), consisting of a drain 5, a source 7 and a gate 4, is three-dimensionally constituted on a P-channel MOS transistor (PMOSTr) consisting of a drain 2, a source 3 and a gate 4 using said gate 4 as a common electrode. The above-mentioned transistors are superposed in such a manner that the current flowing between the PMOSTr and the sources 3 and 7, the drains 2 and 5 of the NMOSTr is applied vertically. |
