| 摘要 |
PURPOSE:To improve the adherence of protective film by a method wherein the surface of semiconductor laser is heated by radient ray irradiation before laser is heated by radiant ray irradiation before an end protective film of a semiconductor laser is formed by means of sputtering process. CONSTITUTION:A laser array 1, a sputter target 2 and a lower side electrode 3 are located on the first position keeping the pressure in a sputtering device 5X10<-6>Torr or less. The array 1 is irradiated by a radiant ray heat source 6. The array 1, the target 2 and the electrode 3 are moved to the second position opposing to the upper side electrode 4. The high frequency power is applied between the electrodes 3, 4, to peform sputtering process forming a film made of the material of the target 2 on the ends A and B of array 1 as a protective film. |
