| 摘要 |
PURPOSE:To eliminate the effect of a parasitic transistor resulting from an internal wiring by a method wherein a self-voltage generating circuit and an internal circuit are formed to the surface layer of a semiconductor substrate, the whole surfaces is coated with an insulating film, and an electrode is formed to the voltage generating circuit through a hole formed to the film while an internal electrode is formed between the two circuits as being positioned on the film and output voltage wirings are formed on both sides of the voltage generating circuit as holding the voltage generating circuit. CONSTITUTION:The substrate potential generating circuit 2 and the internal circuit 3 are formed to the surface layer section of the Si substrate 1, and the whole surface containing these circuits is coated with the insulating film 4. The hole is bored to the film 4, the electrode 5 is fitted to the circuit 2 exposed, and the internal wiring 6 is formed on the film 4 while being positioned between the circuits 2 and 3, thus forming a transistor. In the constitution, the output voltage wirings 7 are formed additionally on the film 4 while being positioned on both sides of the electrode 5, and voltage is applied to the wirings 7, the gate potential of the parasitic transistor is relaxed and a parasitic effect is reduced. Accordingly, the generation of leakage currents between the circuits 2 and 3 is inhibited. |
