| 摘要 |
PURPOSE:To obtain the semiconductor device of good quality having no reverse taper, no overhang, etc., when insulating films, and a gate electrode and a conductive path positioning thereon are to be formed on a semiconductor substrate by a method wherein dummy patterns consisting of a conductive material are provided in addition for reduction of etching troubles. CONSTITUTION:The thick field insulating film 2 is formed on the circumference of the P type Si substrate 1, and the thin gate insulating film 3 is adhered on the surface between the field insulating film. Then polycrystalline Si is deposited on the whole surface, and etching is performed to form the gate electrode 14 on the central part of the film 3, and to form not only the wiring part 15 but the dummy pattern 7 also on the film 2. Accordingly, the areas of the exposing insulating films 2, 3 can be made sufficiently smaller than the area of the surviving poly-crystal owing to existence of the pattern 7, and reverse taper, an overhang, etc., are not generated to the surviving poly-crystal. After then, source. drain regions 6 are provided, the whole surface is covered with an insulating film 10, and an Al wiring 8 is fixed to the wiring part 15, while at this time, the dummy pattern 9 is also provided to prevent the wiring 8 from generating reverse taper etching. |
