| 摘要 |
PURPOSE:To prevent the generation of a crack and a pin hole-shaped defect of an insulating film on an Al pattern and a short circuit between Al wirings by thermally treating the whole at a strain recovery temperature of an Al evaporated film in an N2 or H2 atmosphere just after Al is evaporated. CONSTITUTION:A source-drain diffusion layer 2 is formed to a silicon substrate 1, a contact hole 8 is bored to an SiO2 film 3, and Al-Si 4 is evaporated, and the whole is thermally treated for thirty min or one hr in the N2 or H2 atmosphere at 150-200 deg.C. The heat treatment temperature is called a recovery temperature, and depends upon the conditions of the evaporation of Al-Si. Accordingly, since a residual strain of the Al-Si evaporated film 10 is released before forming a pattern, the rapid movement and diffusion of Al atoms are inhibited even through sintering treatment after forming the pattern, and the formation of the hillock of the Al-Si evaporated film 10 is reduced. The coatability of a protective film (consisting of a PSG film 5 and an SiO2 film 6) is made satisfactory, and a crack is difficult to be generated in the protective film in heat treatment on assembly. |
