| 摘要 |
PURPOSE:To form the semiconductor thin-film in a large area through easy operation by using a safety and low-cost device by applying an organic metallic adduct of a III group organic metallic compound and a V group organic metallic compound or a II group organic metallic compound and a VI group organic metallic compound on a substrate and heating and treating the substrate in a hydrogen atmosphere. CONSTITUTION:A device for manufacturing the semiconductor thin-film is constituted by a reaction pipe 1, the substrates 2, an inert-gas bomb 3 for nitrogen gas, etc., a bomb 4 in which the organic metallic adduct is entered, a hydrogen bomb 5, sprays 6 for applying the organic metallc adduct, a susceptor 7 for supporting the substrates, a heater 8 for heating the substrates, a hydrogen purifier 50, etc. The organic metallic adduct (CH3)3Ga.As(CH3)3 is applied on the substrates 2 by the sprays 6. The substrates 2 are heated at 450 deg.C while flowing hydrogen, the organic metallic adduct applied is decomposed by the heating, and the GaAs III V group semiconductor thin-film is formed. Said substrates are replaced with glass substrates, and the GaAs semiconductor thin-film can be formed on the glass substrate through quite the same treatment operation. |
