发明名称 |
Method for reducing oxygen precipitation in silicon wafers |
摘要 |
PCT No. PCT/US81/01777 Sec. 371 Date Mar. 10, 1982 Sec. 102(e) Date Mar. 10, 1982 PCT Filed Dec. 31, 1981 PCT Pub. No. WO83/02314 PCT Pub. Date Jul. 7, 1983.The rate of oxygen precipitation in a semiconductor wafer during heat treatment is reduced by quickly inserting the wafer into a furnace which has been preheated to the heat treatment temperature. After performing the heat treatment, the wafer is slowly cooled to prevent warpage or cracking.
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申请公布号 |
US4432809(A) |
申请公布日期 |
1984.02.21 |
申请号 |
US19820364542 |
申请日期 |
1982.03.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHYE, PATRICK W.;HEARN, ERIC W.;KULKARNI, MURLIDHAR V.;MARKOVITS, GARY |
分类号 |
H01L21/322;H01L21/324;(IPC1-7):H01L21/32;H01L21/32 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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