| 摘要 |
PURPOSE:To enable the integration of various kinds of optical microelements and the formation of various kinds of optical ICs by forming a piezoelectric thin film on a specified substrate and by combining a surface wave transducer made of the piezoelectric thin film with an optical waveguide made of a specified thin film to form the basic structure of the titled substrate. CONSTITUTION:A piezoelectric thin film 12 is formed on a sapphire (alpha-alumina) substrate 11, and a surface wave transducer 13 made of the film 12 is combined with an optical waveguide 14 made of a thin As2S3 film to form the basic structure of a substrate for an acoustooptic device. Since the sapphire substrate is used, a thin film of a semiconductor such as Si, GaAs or InP can be epitaxially grown. Accordingly, a photodetection diode having p-, n- or p.i.n type structure and a laser diode can be integrated into said acoustooptic device, so optical IC of high density can be obtd. Since the refractive index of the thin As2S3 film can be changed only by irradiating electron beams, the optial waveguide can be easily formed, and optical microelements can be integrated at the same time. |
