发明名称 MANUFACTURE OF X-RAY MASK
摘要 PURPOSE:To remove distortion of a figure according to temperature change by a method wherein a quartz substrate and a quartz frame are used, and a membrane film is constructed of silicon oxide having the small rate of thermal expansion. CONSTITUTION:Plastics 12 of a photoresist film, etc., is applied to one main surface of the quartz substrate 11. After the silicon oxide film 13 is formed on the surface thereof according to sputter evaporation, the substrate formed with the figure-shaped film 14 of gold, etc., having X-ray obstructing ability on the surface thereof using evaporation technique and photolithography technique is formed. After the second hollow quartz substrate 15 is sticked by adhesives 16 coming into contact with the surface of the silicon oxide film at the circumferential edge part of the substrate, the plastic film 12 is removed according to boiling of sulfuric acid, and the first quartz substrate 11 is removed at the same time.
申请公布号 JPS5931027(A) 申请公布日期 1984.02.18
申请号 JP19820141357 申请日期 1982.08.13
申请人 SUWA SEIKOSHA KK 发明人 IWAMATSU SEIICHI
分类号 G03F1/00;G03F1/68;G03F1/80;H01L21/027 主分类号 G03F1/00
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