| 摘要 |
PURPOSE:To flatten the surface of an epitaxial-grown silicon layer a method wherein the epitaxial layer is grown under pressure not higher than 100Torr. CONSTITUTION:An opening 3 is formed in an insulating film 2 on the desired part in the main plane of a silicon substrate 1 having an insulating film formed on its main plane. An epitaxial-grown silicon layer 4 is grown on the main plane of the substrate 1 exposed to the area of the opening 3 under pressure not higher than 100Torr. By doing so, it becomes possible to avoid occurrence of anomalous epitaxial growth at the peripheral parts of the epitaxial layer 4 contiguous with the insulating film 2 and to eliminate the difference in a layer thickness between the peripheral and central parts, thereby resulting in the flattened surface of the epitaxial layer 4. |
