发明名称 MANUFACTURE OF X-RAY MASK
摘要 PURPOSE:To remove distortion of a figure according to thermal expansion by a method wherein a membrane of silcon oxide film is sticked on a quartz frame. CONSTITUTION:The silicon oxide film 12 to be obtained by performing thermal oxidation to silicon is formed on one main surface of a silicon substrate 11. The substrate formed with the figure-shaped film of gold, etc., having X-rays obstructing capability is manufactured using usual evaporation technique and photolithography technique, and the quartz frame 14 is adhered with liquid glass type paste 15 consisting of Si(OH)4, etc., to the surface edge part of the substrate thereof formed with the figure-shaped film. Then, the silicon substrate 11 is removed from the back by Freon gas plasma or a mixed liquid of fluoric acid and nitric acid to obtain the X-ray mask.
申请公布号 JPS5931026(A) 申请公布日期 1984.02.18
申请号 JP19820141356 申请日期 1982.08.13
申请人 SUWA SEIKOSHA KK 发明人 IWAMATSU SEIICHI
分类号 G03F1/00;G03F1/68;G03F1/80;H01L21/027 主分类号 G03F1/00
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