| 摘要 |
PURPOSE:To form an insulating section properly and efficiently in a semiconductor by utilizing a means of electrodeposition (passivation). CONSTITUTION:A semiconductor wafer to which each element is formed and a groove functioning as the insulating section is formed is adsorbed to a wafer chuck 1, and the wafer is immersed in an electrodeposition liquid in an electrodeposition tank 4 by operating the chuck. Consequently, when voltage of polarity shown in the figure is applied between electrodes 2 and 5, glass powder in the electrodeposition liquid is charged at negative electricity by the electrode 5, drawn near to the electrode 2 by the action of an electric field formed between the electrodes 2 and 5, and electrodeposited selectively in the groove section of the wafer W. The electrodeposition liquid fed from pipe 9a passes through the electrode 5, and advances in the direction of the electrode 2, is in contact with the wafer W, overflows from an inner cylinder 4b, falls into an outer cylinder 4a, and is returned into an agitation tank 6 from a pipe 9b. Accordingly, an execellent vitreous layer can be formed efficiently because the wafer W is supplied with the sufficient electrodeposition liquid at all times in the electrodeposition tank 4. |
