| 摘要 |
PURPOSE:To obtain a grown layer of good crystalization at low temperatures by such an arrangement wherein a single crystal substrate or a semiconductor substrate on which insulation film patterns are formed is placed on a suscepter, and it is put in a vapor growth device, and an epitaxial layer is caused to grow on the substrate by supplying ethyl silicate gas, hydrogen gas and such an amount of chlorine gas of which flowrate is regulated in relation to hydrogen into the device. CONSTITUTION:On an Si substrate 1 of P type or N type, an SiO2 film 2 is selectively formed, and the substrate is placed on a carbon suscepter and this is put in a reaction chamber composing a gaseous phase growing device. Next, as raw material gases, Si(OC2H5)4, H2 and HCl are supplied into the chamber, while the ratio of Si(OC2H5)4/H2 is maintained at about 1% and that of HCl/ H2 at 0.1-1%. After that, the pressure of gas is reduced to about 30 Torr, and the suscepter is heated up to about 700 deg.C and the substrate 1 is irradiated by ultraviolet rays having such wavelength decomposing Si(OC2H5)4. By this method, an Si single crystal layer 3 is caused to grow at only exposed parts of the substrate 1. By this arrangement, growth of layer at low temperature is made possible. |
