Semiconductor laser

摘要

A very narrow current injection region (16'') is made by means of terrace-shaping of the surface of the current limiting layer (13) forming a step thereon, the current limiting layer being on the epitaxially grown double hetero structure layers (10, 11 and 12) including the active layer (11). By so terrace-shaping, when Zn as a p-type impurity to form the current injection region (16) is diffused from the surface of the current limiting layer (13), the diffused region is formed to have a deeper part (16'') and a shallower part (16'), and the deeper part (16'') can be made very narrow by selecting the position of the stripe-shaped diffused region with respect to the step (14).