METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTAL OF SEMICONDUCTOR

摘要

PURPOSE:To maintain concn. of a component having high dissociation pressure in the growth direction to the prescribed uniform value and to obtain single crystal or mixed crystal having strict stoichiometric composition by controlling independently the vapor pressure of plural components having high dissociation pressure respectively in the production of single crystal or mixed crystal of a semiconductor of multi-elemental compd. by a natural solidification method. CONSTITUTION:Single crystal or mixed crystal of a semiconductor of a multi- elemental compd. is produced by a natural solidification method. In this produc tion, both a boat 16 housing melt of a raw material and the componental elements (e.g. A and B) having high dissociation equibrium vapor pressure are arranged respectively at the inside of a reaction pipe 10. Also the temp. distribution of the inside of a furnace housing the reaction pipe 10 is regulated so that at least four-plateau parts having different temp. are formed. The vapor pressure in a growth chamber 12 of at least two kinds of componental elements (e.g. A and B) having high dissociation equibrium vapor pressure is indepenetally controlled, respectively.