| 摘要 |
PURPOSE:To reduce the band gap by a method wherein an intrinsic amorphous Si layer by the glow discharge decomposition of raw material gas wherein the rate of mixture of disilane with monosilane is changed. CONSTITUTION:An amorphous Si layer having the first conductivity type, the intrinsic amorphous Si layer, an amorphous Si layer having the second conductivity type, and the second electrode are formed in this order on a substrate having the first electrode. The optical forbidden band width of this intrinsic amorphous Si layer varies from large to small from the light incidence side to the opposite side. This intrinsic amorphous Si layer is formed by the glow discharge decomposition of raw material gas wherein the rate of mixture of disilane with monosilane is changed. The intrinsic amorphous Si layer formed in this manner has the optical forbidden bandwidth being increased, and accordingly the band gap can be enlarged. |
