| 摘要 |
PURPOSE:To peform a strong plating on an eutectic alloy layer by a method wherein, after a metal with which a semiconductor and a eutectic alloy can be formed has been deposited using a physical means, an eutectic alloy of the semiconductor and the metal is formed by performing a heat treatment. CONSTITUTION:First, the oil and lipid adhered on the surface of Si are removed using an organic solvent. Then, the SiO2 on the surface is removed with hydrofluoric type liquid. Subsequently, a metal which is used to form an eutectic alloy together with Si is vacuum-deposited, a heat treatment is performed in N2 gas for several minutes, and an eutectic alloy of metal and Si is formed. Au can be attached to the eutectic alloy layer as above-mentioned, Au-Si eutectic alloy layer for example, by performing an electroplating. |
