| 摘要 |
PURPOSE:To prevent the generation of leakage even when the width of an isolation region is reduced by partially widening the width of a region opposite to the base region of the isolation region. CONSTITUTION:Two lateral type PNP transistors 31, 32 are formed while holding the isolation region 41. The region 41 is narrowed in order to increase the density of a pattern, and there is a danger that emitter wirings 37, 38 are short- circuited. The width of the region 41 is widened partially toward the base regions 31b, 32b in the regions containing sections opposite to the base regions, and the projecting sections 42, 43 of the isolation region are formed. Accordingly, even when the width of the emitter wirings 37, 38 is narrowed by variance on manufacture, the generation of leakage is prevented because the base regions 31b, 32b are covered sufficiently with the projecting sections 37l, 38l of the emitter wirings. |
