| 摘要 |
PURPOSE:To obtain an analog switching element of low offset level by providing a high conduction layer of wide range on the surface of a collector region to reduce the collector resistance and using a reverse transistor connection. CONSTITUTION:An N type collector 2 on a P type substrate 1 buried with N<+> type layer 7 is isolated by P type layers 3, 4, and a P<+> type base 5 and an N<+> type emitter 6 are provided. When N<+> type layers 16, 17 are formed on the overall surface of the collector 7, the collector resistance decreases, thereby reducing the offset at the time of operating as an analog switching element. When the layer 2 is used as an emitter and the layer 6 is used as a collector in a reverse transistor, the saturated voltage between the collector and the emitter can be further reduced, thereby performing the low offset level as an analog switching element. Accordingly, in the analog switching circuit using the same, noise at the switching ON time can be remarkably reduced. |
