| 摘要 |
PURPOSE:To realize high integration, less power consumption, and high-speed operation, by using a series circuit of two depletion type FETs and varying loading ability according to control voltage. CONSTITUTION:Two N channel depletion type FETs Q'1 and QC as the 1st and the 2nd FETs are connected in series. The gate and source of the FETQ'1 are connected in common as one terminal 1 and the drain of the FETQC is connected as the other terminal 2 to a power source VDD. Then, the loading ability is set freely according to the control voltage VCON supplied to the gate terminal of the FETQC. |
