发明名称 Cleaning device for a plasma etching system
摘要 A cleaning apparatus for a plasma etching system for etching a sample which includes a chamber having an inlet and an outlet, a sample table positioned in the chamber and which further includes a first electrode, a counter electrode positioned in the chamber opposite the first electrode and a plurality of heating mechanisms positioned in the inlet and outlet of the chamber, in the counter electrode and in the sample table for desorbing a reaction product adsorbed on surfaces of the inlet and outlet of the chamber, the counter electrode and the sample table prior to plasma etching of the sample.
申请公布号 US4430547(A) 申请公布日期 1984.02.07
申请号 US19810309098 申请日期 1981.10.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YONEDA, MASAHIRO;HINE, SHIRO;KOYAMA, HIROSHI
分类号 C23F4/00;H01J37/16;H01J37/32;H01L21/00;H01L21/302;H01L21/3065;(IPC1-7):B23K9/00 主分类号 C23F4/00
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