发明名称 |
Cleaning device for a plasma etching system |
摘要 |
A cleaning apparatus for a plasma etching system for etching a sample which includes a chamber having an inlet and an outlet, a sample table positioned in the chamber and which further includes a first electrode, a counter electrode positioned in the chamber opposite the first electrode and a plurality of heating mechanisms positioned in the inlet and outlet of the chamber, in the counter electrode and in the sample table for desorbing a reaction product adsorbed on surfaces of the inlet and outlet of the chamber, the counter electrode and the sample table prior to plasma etching of the sample.
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申请公布号 |
US4430547(A) |
申请公布日期 |
1984.02.07 |
申请号 |
US19810309098 |
申请日期 |
1981.10.06 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YONEDA, MASAHIRO;HINE, SHIRO;KOYAMA, HIROSHI |
分类号 |
C23F4/00;H01J37/16;H01J37/32;H01L21/00;H01L21/302;H01L21/3065;(IPC1-7):B23K9/00 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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