发明名称 |
Semiconductor substrate bias circuit |
摘要 |
A semiconductor circuit consisting of a dynamic-type circuit and a bias-voltage generating circuit. The bias-voltage generating circuit is comprised of a first bias-voltage generator and a second bias-voltage generator. The first generator absorbs a variable substrate current, the magnitude of which is proportional to the operating frequency of the dynamic-type circuit, while the second generator absorbs a substrate current, the magnitude of which is not proportional to the operating frequency of the dynamic-type circuit. Alternately, both portions of the substrate current may be absorbed via the same circuitry.
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申请公布号 |
US4430581(A) |
申请公布日期 |
1984.02.07 |
申请号 |
US19810263279 |
申请日期 |
1981.05.13 |
申请人 |
FUJITSU LIMITED |
发明人 |
MOGI, JUN-ICHI;MIYASAKA, KIYOSHI;ENOMOTO, SEIJI;NOZAKI, SHIGEKI |
分类号 |
H01L27/04;G05F3/20;G11C11/4074;G11C11/408;H01L21/822;H01L27/02;H01L29/78;(IPC1-7):H03K3/01;H03K3/35 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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