| 摘要 |
PURPOSE:To obtain a smooth thin film having a large area, little defects and no segregation in the composition, by forming under prescribed conditions an oxide single crystal seed at one end of a thin amorphous oxide film having a specified composition and by carrying out successive recrystallization from the end at a local temp. gradient. CONSTITUTION:An oxide having a chemical composition represented by a formula Pb5Ge3-xSixO11 (0<=x<=2) is made amorphous and worked into the shape of a battledore. A vertical temp. gradient is provided to one narrow end of the thin amorphous oxide plate 4 so that the plane C coincides with the planar direction of the growth of a seed, forming a hexagonal platelike oxide single crystal seed 5. Parallel heaters 6 are placed above and below the plate 4 to provide a local temp. gradient from the end at which the seed 5 is present, the seed 5 is grown by successive heating, and finally the whole plate 4 is recrystallized to obtain a pyroelectric single crystal 7. A processing stage is made unnecessary, and mass production is enabled. |
