发明名称 VAPOR DEPOSITION METHOD
摘要 PURPOSE:To enable inexpensively the production of a vapor-deposited thin film which is stable for a long time, by maintaining the acceleration voltage for electron beams for heating and evaporating higher by a specified value or above than the acceleration voltage of an electron beam for heating and melting a vapor deposition material to be supplied to a vessel for an evaporating source. CONSTITUTION:A vessel 3 of an evaporating source is formed as a vessel having the long axis in parallel with the transverse direction of a substrate 2 under movement, and preventive plates 7, 7 for sticking of splashes are provided in the stage vapor depositing orthogonally a vapor deposition material evaporating from a vessel for an evaporating source 3 onto the substrate 2 while sending the substrate 2 through intermediate rolls 10 along a cylindrical can 1 then moving though a shaft 8 to a take up shaft 9. A wire-like vapor deposition material 4 to be supplied to said vessel 3 is heated and melted with an electron beam 6 for melting, and is further heated and evaporated with an electron beam 5 for evaporation. Said electron beams are so controlled as to satisfy the conditions EV- EM>5kV where the acceleration voltage of the beam 6 for melting is designated as EMkV and the acceleration voltage of the beam 5 for evaporation EVkV.
申请公布号 JPS5920468(A) 申请公布日期 1984.02.02
申请号 JP19820130822 申请日期 1982.07.27
申请人 MATSUSHITA DENKI SANGYO KK 发明人 SHINOHARA KOUICHI
分类号 C23C14/30;C23C14/56;G11B5/85;H01F41/20 主分类号 C23C14/30
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