Localizing ohmic contact in the contact layer of a light emitting semiconducter device.

摘要

The invention relates to light-emitting semiconductor devices, such as lasers and light-emitting diodes. The device comprises, over the surface on the side opposite to that of the substrate, metallisation (5) for making connections and a layer into which a localising contact (7) is diffused. The contact layer is split into two layers of the same material. The first layer (11) has a large thickness (e1) and is of the same type of conductivity as the confinement layer (2) lying immediately under it. The second layer (12) has a small thickness (e2) and has the opposite type of conductivity. Diffusion of a localising contact of the first type of conductivity restores an ohmic chain; the second layer (12) forms a diode around the localising contact. Application to lasers and light-emitting diodes. <IMAGE>