发明名称 UN DISPOSITIVO SEMICONDUCTOR MOLDEADO EN VIDRIO.
摘要 <p>An axial-lead glass-molded diode having at least one semiconductor element (3) clamped between a pair of electrode leads (2) by means of a brazing material, and provided with glass (5) covering the periphery thereof by means of molding. Each of the electrode leads comprises an electrode (6) composed of a core material (6a) and a tubular material (6b) and a lead (2) made of a material of the same kind as the core material (6a) and welded thereto. As the core material, a metal excellent in thermal and electrical conductivities, such as copper, is employed, while as the tubular material a metal having a thermal expansion coefficient smaller than that of the core material, such as an invar alloy, is employed, and the core material and the tubular material are metallurgically connected together. The thermal expansion coefficient of the electrode in the longitudinal sectional direction can be regulated by adjusting the thickness of the tubular material with respect to the core material in the crosssectional direction.</p>
申请公布号 ES519272(D0) 申请公布日期 1984.02.01
申请号 ES19830519272 申请日期 1983.01.26
申请人 HITACHI, LTD. 发明人
分类号 H01L23/48;H01L23/29;H01L23/31;H01L23/492;H01L25/07;(IPC1-7):01L23/48 主分类号 H01L23/48
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