| 摘要 |
PURPOSE:To obtain a poly-Si film pattern having a gradually stepped part as a protection film by depositing multilayer oxide film while an etching rate becomes higher as the layer becomes upper. CONSTITUTION:A poly-Si 3 is stacked on an SiO2 2 on an Si substrate 1, insulating films 4, 5 are then stacked. In this case, etching rate of film 5 is lower than that of film 4. As the photoresist mask 6, the films 4, 5 are patterned and the film 3 is etched with the films 4, 5 used as the mask. Thereby, the film 4 is etched as in the case of the poly-Si 3 and a pattern having gradually stepped part is formed. Thereby, an aluminum wiring 8 is not easily disconnected on the occasion of providing said aluminum wiring crossing the Si layer 3 after convering by an insulating film 7. As a result, fabrication yield and quality can be improved. |
