| 摘要 |
PURPOSE:To nondestructively read out optical information by associating a P-N junction formed on a silicon substrate for detecting the information and a transistor formed on an insulating film which covers the surface of the substrate. CONSTITUTION:When the voltage of a substrate 1 is raised from a negative voltage to a positive voltage, a depletion layer is expanded between P type regions 11a, 11b of floating state and the substrate 1. When a light is incident via windows 3a, 3b, electron-hole pairs are generated, the holes flow to the region 11a, and the electrons flow to the substrate 1. Accordingly, a metal film 6 which is electrically connected to the regions 11a, 11b to form the gate of a transistor becomes positive voltage. Then, the surface potential of the silicon film under the metal film is varied by the voltage of the film 6, and when the prescribed voltage is applied to source, drain 4, 5, the current in response to the voltage of the film 6 is flowed, and the optical information can be nondestructively read out. |
