发明名称 Process for the production of silicone carbide composite
摘要 Sintered silicon carbide composites containing diamond crystals are made through a process wherein a first dispersion of diamond crystals and carbon black in paraffin is formed, along with a second dispersion of carbon fiber, carbon black and filler in paraffin. One of the dispersions is compacted to produce a physically stable intermediate compact which is then recompacted with the remaining dispersion to produce a binary compact. The latter is subjected to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of the paraffin, after which the binary compact is infiltrated with liquid silicon and sintered to produce a beta -silicon carbide binder uniting the resulting composite.
申请公布号 US4428755(A) 申请公布日期 1984.01.31
申请号 US19810313241 申请日期 1981.10.20
申请人 GENERAL ELECTRIC COMPANY 发明人 OHNO, JOHN M.
分类号 B01J3/06;B24D3/06;C04B35/573;(IPC1-7):C04B31/16;C09C1/68 主分类号 B01J3/06
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