| 摘要 |
PURPOSE:To reduce the gap length and at the same time to vary the thickness of a conductor film for current bias regardless of the gap length, by providing a current bias film on a substrate equal to a ''Permalloy'' sensor film with adjacency to and no overlap with the ''Permalloy'' film. CONSTITUTION:A ''Permalloy'' sensor 4 has a 20X50mum size with 40nm thickness, and an Al current bias conductor 5 of 400nm thickness with 20mum width is formed on a substrate in parallel to the ''Permalloy'' film. In this case, the bias magnetic field characteristics are obtained as shown in the figure when Al is energized by 10<6>A/cm<2>. The intensity of the bias magnetic field differs by the form and composition of the used magneto-resistance effect film such as the ''Permalloy'' film, etc. and will usually suffice with 10-30 Oe. As a result, a sufficient bias magnetic field is ensured with not having overlap between the ''Permalloy'' sensor film and a conductor film for current bias and by selecting the distance between both films at the optimum value. Thus the gap length is limited with an electric insulated film regardless of the form of the current bias conductor. This element reduced the gap length. |
