| 摘要 |
A two-pole overcurrent protection device comprises an integrated circuit with a thyristor having an emitter layer and base layer which, on the cathode side, is connected to the emitter layer on the cathode side by means of a normally non-conducting MOS transistor. The on-state voltage across the thyristor is supplied to the control electrode of the transistor via a Schottky diode, whereby, at a certain thyristor current, the thyristor is made conducting and short-circuits the cathode-emitter junction. The edge of the Schottky diode is arranged adjacent to the cathode base layer and at such a distance therefrom that the barrier layer at the center junction of the thyristor penetrates into the diode and limits the voltage on the control means of the MOS transistor to a harmless value. |
