发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To obtain a light source which has no spectral noise by disposing one or more sets of diffraction gratings of corrugated periodic structure which is disposed in a plane parallel to the active layer and has apodized amplitude distribution on the boundary between two arbitrary layers of an active layer, a waveguide layer, a clad layer, and the first grown layer of substrate side. CONSTITUTION:A diffraction grating which has a corrugated periodic structure represented by N(lambda0/2ne) where N is integer number, lambda0 is wavelength in vacuum of laser light, ne is effective refractive index is provided on the boundary between two arbitrary layers of an active layer, a waveguide layer, a clad layer, and the first grown layer of a substrate side. In other words, an N type InP layer 73, N type, P type and I type In0.7Ga0.3As0.6P0.4 clad layers 71, 72, an In0.6Ga0.4As0.86P0.14 active layer 70, a P type InP layer 74, a P type In0.6Ga0.4 As0.86P0.14 cap layer 741, an SiO2 layer 79, an ohmic contacting Cd diffused layer 78, and electrodes 77, 791 are formed on an N type InP substrate 76, and a diffraction grating 75 is formed on the boundary between the layers 71 and 73.
申请公布号 JPS5914690(A) 申请公布日期 1984.01.25
申请号 JP19820123869 申请日期 1982.07.16
申请人 NIPPON DENKI KK 发明人 SAITOU FUJIO
分类号 H01S5/00;H01S5/12 主分类号 H01S5/00
代理机构 代理人
主权项
地址