| 摘要 |
PURPOSE:To form a fluoride film of Ni and to improve the corrosion resistance of a thin film consisting essentially of Ni or Ni-Fe, by treating the surface of said thin film with plasma having F* (neutral radical of fluorine). CONSTITUTION:A thin film consisting essentially of Ni or Ni-Fe is placed on an electrode 9 and is subjected to a plasma treatment for about 1-5min at about 300-400W power by evacuating the air through an air release port 13, maintaining the gaseous pressure in a bell jar 7 at about 1X10<-1>Torr and supplying gaseous hydrocarbon such as pure CF4 through an inflow port 12, in a parallel plane type plasma dry etching device provided with a grounded electrode 8 and the electrode 9 connected to an RF power source 11 with a matching box 10 in the bell jar 7. Then, the F* having extremely high activity dissociated electrolytically from the gaseous CF4 combines with the Ni of the thin film to form a film of NiF2, thereby improving the corrosion resistance of the thin film. |
