首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
ION IMPLANTATION TO FORM MOS DEVICES
摘要
申请公布号
GB2056167(B)
申请公布日期
1984.01.18
申请号
GB19800005578
申请日期
1980.02.19
申请人
MITEL CORP
发明人
分类号
H01L21/033;H01L21/265;H01L21/339;H01L21/8234;H01L21/8238;H01L27/092;H01L27/105;H01L29/762;(IPC1-7):H01L21/26
主分类号
H01L21/033
代理机构
代理人
主权项
地址
您可能感兴趣的专利
DEVICE FOR CRUSHING BROKEN RUBBER PIECES
旋律二胡
手指保护器
防撬锁扣
Gauze burner.
Process for the removal of lower molecular weight fractions of poly(arylene sulfide) polymers.
Process for preparing polyalkyl tetrahydronaphtalenes.
Method of adsorbing and removing nitrogen oxides.
Apparatus for removing keys from support grid.
Glass composition.
Process for treating polyolefin foam particles.
Procedure and device for performing measurements on several optical fibres.
Shock absorber for vehicle seat belt.
Device for displacing a dental apparatus.
WALL/CEILING SUPPORT FOR TELEVISION MONITOR.
NOVEL ALUMINUM NITRIDE REFRACTORY MATERIALS AND METHODS FOR MAKING THE SAME.
Arrangement for storing an information signal in a memory and retrieving the information signal from said memory.
Open load detection circuit.
Process for the preparation of Ph3C B(C6F5)4.
Resin-sealed type semiconductor device and method for manufacturing the same.