| 摘要 |
PURPOSE:To facilitate oscillation with a high efficiency by blocking a leakage current which does not flow through an active layer by high resistance current blocking layers. CONSTITUTION:An active region 11 is held between high resistance current blocking layers 15 which are buried in two V-grooves and is provided in a bank 20 of an inverse V-shape. The top end part of the inverse V-shape bank 20 is contacted with a V-shape current flow layer 16. Therefore, a current which is made to flow by a voltage applied between a P-type electrode 19 and an N-type electrode 18 flows from the current flow layer 16 into the active region 11 selectively and the oscillation with very little leakage current and a high efficiency is realized. As the P-type electrode 19 is covered with an SiO2 insulating layer 17 except a stripe part above the active layer, the voltage is applied to the P-N junction of the active region 11 part only so that a capacitance induced by the high junction can be less than 2pF and speed modulation can be achieved. |
