发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent the input level margin from being decreased even if output circuits are switched at the same time, by making the on-resistance of a logical gate outputting signal, to an output circuit among logical gates forming an internal circuit larger than the on-resistance of other logical gates. CONSTITUTION:The output circuits 204, 205 and 206 are output ciruits possible for switching from ''1'' to ''0'' level at the same time. The output circuits switched simultaneously are driven by 4-input NORs 400, 401 and 402. When inputs 403, 404, 405 of the 4-input NOR are changed from ''1'' to ''0'' level in this way, PMOSs 406, 407, 408 are turned on, a current flows from a Vcc power supply and an input potential of the output circuits 204, 205, 206 is increased. the 4-input NORs 400, 401, 402 have a large ON-resistance, since 4-PMOS is arranged in series. Thus, the leading edge of the input signal to the output circuits 204, 205, 206 lags, allowing to suppress the floating of a GND potential.
申请公布号 JPS594234(A) 申请公布日期 1984.01.11
申请号 JP19820111697 申请日期 1982.06.30
申请人 HITACHI SEISAKUSHO KK;HITACHI ENGINEERING KK 发明人 NISHIO YOUJI;KUBOKI SHIGEO;MASUDA IKUROU;IKEDA MICHIHIRO;TORII SHIYUUICHI
分类号 H01L21/822;H01L27/04;H03K19/003;H03K19/0948 主分类号 H01L21/822
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