| 摘要 |
<p>PURPOSE:To accurately form a fine pattern by measuring the size of an image by an electron beam scanning of low energy of the pattern formed by charged particle beam of a film to be treated on a substrate, and controlling the beam emitting amount in response to the result. CONSTITUTION:An electron beam 2 is emitted to a resist film 60 to form a fine pattern, the emitted part 60a is scanned by an electron beam 12 of low energy and low current, reflected electrons 14 are detected by a detector 15, and an enlarged image of the part 6a is indicated on an indicator 16. The size of the pattern is measured from the enlarged image, and the exposure amount of the beam 2 is controlled in response to the result. Accordingly, the pattern can be accurately formed.</p> |
