| 摘要 |
PURPOSE:To improve a light take-out efficiency and to reduce the deterioration with time, by superposing p type Ga1-xAlxAs and n type Ga1-yAlyAs (y>x) on a p type GaAs substrate and by forming a p-n junction end and a Ga1-xAlxAs side surface to be at an obtuse angle to the substrate. CONSTITUTION:An apiezon wax 11 is connected on a substrate 10, which is grown in liquid phase as prescribed and provided with electrodes on both surfaces. A dicing groove 12 being provided, a mesa groove 13 is formed in the ratio of H2SO4:H2O:H2O2=3:1:1 by using a p-side electrode 5p as a mask. Then the wax 11 is removed and the substrate is divided into chips. While an emitted light in the peripheral part is directed downward vertically and absorbed by the substrate in conventional devices, it is released to be an effective light in this constitution, since there is no substrate below the slant of mesa. Thus, the efficiency of light emittance is improved remarkably, and the deterioration thereof with time is not recognizable almot at all for continuous 1,000hr. |
