| 摘要 |
<p>PURPOSE:To increase accuracy in mask aligning and shorten the process to form a buried diffusion layer by growing successively an oxide film and then a nitride film by the chemical vapor phase growth method and by forming a section to be left as a section for alignment by means of pattering the nitride film. CONSTITUTION:Silicate glass, for example, that contains antimony as impurity is formed on a semiconductor substrate 51 by piston method or CVD method by the thickness of 20,000Angstrom . After buried diffusion area is formed by patterning, a 1,000Angstrom thick oxide film 53 and then 1,000Angstrom thick nitride film 54 are grown by CVD method. After an alignment section 52 is formed by patterning the nitride film 54, it is heat-treated to form buried diffusion layers 55 and the oxide film 53 and the silicate glass 52 are removed except on the portion 54a that is for alignment. Because the nitride film 54a is left as the alignment section, it is not necessary as in the conventional process to form step between the diffusion area and other area. This shorten the manufacture process.</p> |
