| 摘要 |
PURPOSE:To avoid the increase of contact resistance by removing a natural oxide film formed onto a diffusion layer of the semiconductor device, attaching pure Al wiring to the natural oxide film and coating the upper section of the Al wiring with a wiring metallic layer, which contains Si and consists of Al, when metallic wiring is attached onto the diffusion layer. CONSTITUTION:An n<+> type region 24 is diffused and formed to a p type Si substrate 21, the region 24 is coated with a PSG film 22 with an opening corresponding to the region 24, and the region 24 exposed in the opening is coated with an amorphous Si layer 25. The pure Al layer 23 is sputtered to the whole surface at a temperature of 300-400 deg.C, and spikes 26 are grown in the region 24 through a reaction with the amorphous layer 25. The spikes 26 penetrate the Si layer 25 and intrude into the region 24 at that time, but they need not intrude into the substrate 21. The whole surface is coated with the Al layer 27 containing 1-2% Si, and the metallic wiring in which contact resistance does not increase is obtained. |
